semiconductor group 1 02.96 type ordering code pin configuration marking package 1) (tape and reel) 1 2 3 bas 40-04w bas 40-05w bas 40-06w q62702-a1065 Q62702-A1066 q62702-a1067 a1 a1 c1 c1 a2 c2 c1/a2 c1/c2 a1/a2 44s 45s 46s sot-323 maximum ratings parameter symbol values unit reverse voltage v r 40 v forward current i f 120 ma surge forward current, t 10 ms i fsm 200 ma total power dissipation t s 106 c p tot 250 mw junction temperature t j 150 c operating temperature range t op C 55 + 150 c storage temperature range t stg C 55 + 150 c thermal resistance junction-ambient 2) r th ja 395 k/w junction-soldering point r th js 175 k/w 1) for detailed information see chapter package outlines. 2 ) package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm 2 cu. silicon schottky diode bas 40w
bas 40w semiconductor group 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol value unit min. typ. max. dc characteristics breakdown voltage i (br) =10 m a v (br) 40 C C v forward voltage i f =1ma i f =10ma i f =15ma v f 250 350 600 310 450 720 380 500 1000 mv reverse current v r =30v v r =40v i r C C C C 1 10 m a diode capacitance v r =0v, f = 1 mhz c t C35 pf charge carrier life time i f =25ma t C10Cps differential forward resistance i f =10ma, f =10khz r f C10C w series inductance l s C2Cnh
semiconductor group 3 bas 40w forward current i f = f ( v f ) diode capacitance c t = f ( v r ) reverse current i r = f ( v r ) differential forward resistance r f = f ( i f )
semiconductor group 4 bas 40w forward current i f = f ( t a ; t s *) *package mounted on epoxy permissible pulse load i fmax / i fdc = f ( t p ) permissible load r thjs = f ( t p )
|
